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                About information presented in this cross reference

                The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
                Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
                TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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                有助于节电并提高电如果抛开他是唐龙源PFC效率的650V/12A的SiC SBD:TRS12A65F、TRS12E65F

                Product News 2020-05

                The package photograph of SiC SBDs of 650 V/12 A contributing to power saving and high efficiency of power supply PFCs : TRS12A65F, TRS12E65F.

                Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched 650 V/12 A Schottky Barrier Diodes (SBDs) "TRS12A65F" and "TRS12E65F" using silicone carbide (SiC), whiclh is a new material that enables power saving and high-efficiency of power supply PFCs. There are two types of packages, TRS12A65F uses isolation type TO-220F-2L and TRS12E65F uses non-isolation type TO-220-2L. Products with 12 A forward current are newly available to cope with the increase in power consumption of equipment.

                The new products use second-generation improved JBS (Junction Barrier controlled Schottky) architecture, which reduces the figure of merit (VF?Qcj[1]) to approximately 67 %[2] over the first-generation for higher non-repetitive peak forward surge currents and lower forward voltage of up to 1.45 V, with a maximum of 97 A[3]. Because of these matters, new products are less breakable and have low power dissipation. And, by their high voltage and low power dissipation, the new SiC SBD products can operate under higher voltage or higher current than existing Si FRD[4] products that use same size package. The new products increase efficiency and margin of thermal design by decrements of heat dissipation which derives from their low power dissipation.

                Toshiba will expand lineup in the future and contribute to higher efficiency and downsizing of communications equipment, servers, inverters, and other products.

                Notes:
                [1] Qcj : Total charges between 0.1 V and 400 V of inverse voltage of junction capacitance calculated from Cj-VR curve (as of November 2019)
                [2] Comparison with TRS12E65C
                [3] Case of TRS12E65F
                [4] FRD (Fast Recovery Diode)

                Features

                • High non-repetitive peak forward surge current :
                    IFSM=92 A (TRS12A65F)
                    IFSM=97 A (TRS12E65F)
                • Low reverse current : IR=0.6 μA (typ.)
                • Two types of packages :
                   Isolation type TO-220F-2L package (TRS12A65F)
                   Non-isolation type TO-220-2L package (TRS12E65F)

                Applications

                • Power supplies for industrial equipment
                  (Base stations, PC servers, power supplying facilities for electric vehicles and laser beam machines, etc.)
                • Power supplies for consumer equipment
                  (Organic EL-TVs, audio amplifiers, projectors and multi-function printers, etc.)

                Product Specifications

                (Unless otherwise specified, @Ta=25 °C)

                Part number TRS12A65F TRS12E65F
                Packages TO-220F-2L
                (Isolation type)
                TO-220-2L
                (Non-isolation type)
                Absolute
                maximum
                ratings
                Repetitive peak reverse voltage  VRRM  (V) 650
                Forward DC current  IF(DC)  (A) 12
                Non-repetitive peak forward surge current  IFSM  (A) @t=10 ms 92 97
                Junction temperature  Tj  (°C) 175
                Reverse current  IR typ.  (μA) @VR=650 V 0.6
                Forward voltage  VF typ.  (V) @IF=12 A 1.45
                Total capacitive charge  Qcj typ.  (nC) @VR=0.1 to 400 V 30[1]
                Thermal resistance(junction-to-case)  Rth(j-C) max  (°C/W) 3.65 1.3

                Internal Circuits

                The illustration of internal circuit of SiC SBDs of 650 V/12 A contributing to power saving and high efficiency of power supply PFCs : TRS12A65F, TRS12E65F.

                Application Circuit Example

                The illustration of application circuit example of SiC SBDs of 650 V/12 A contributing to power saving and high efficiency of power supply PFCs : TRS12A65F, TRS12E65F.

                The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass-production design stage. Providing these application circuit examples does not grant any license for industrial property rights.

                Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

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