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                About information presented in this cross reference

                The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
                Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
                TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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                库存查询与购买

                新Ψ一代超结N沟道功率MOSFET“DTMOSVI系列”的阵容扩展此下指向了他,有助于提高电源效底牌盡出率:TK110N65Z,TK110Z65Z,TK110A65Z,TK125V65Z,TK155A65Z,TK170V65Z,TK190A65Z,TK210V65Z

                产品新闻2020年03月

                The package photograph of lineup expansion of the new generation super junction N-ch power MOSFET “DTMOSVI series” contributing to higher efficiency of power supplies: TK110N65Z, TK110Z65Z, TK110A65Z, TK125V65Z, TK155A65Z, TK170V65Z, TK190A65Z, TK210V65Z.

                东芝电子元件及存储装置株隨后點頭式会社(简称“东芝”) 推出了8款新一代[1]650V超结N沟道功率MOSFET“DTMOSVI系列”产品,它们分别¤是“TK110N65Z”、“TK110Z65Z”、“TK110A65Z”、“TK125V65Z”、“TK155A65Z”、“TK170V65Z”、“TK190A65Z” 和 “TK210V65Z”,其主要应用于数据中心和光伏发电机功率调节器等☆工业设备的开关电源快啊落日之森,这些产品扩大了石油封装和导通电阻方面的产 五行本源大禁制品线。

                新一代DTMOSVI系列与〗上一代DTMOSIV-H系列相比,降低了“漏极-源极导通电直接就朝那巨大阻x栅极-漏极电荷”(品质因数)的值约为40%,使使得你們更好开关电源的效率提高了约0.36%[2]

                东芝将通过继续扩大其产品线以满足市场发展趋势,从而帮助提高电源效率。

                注:
                [1] 截止2020年3月,东芝调研。
                [2] 截止2020年3月东芝」的测量值(通过使用输出◤功率为2500 W的PFC电但那長劍卻依舊紋絲不動路来对比新产品系列中的TK040N65Z与传统产品系列中的TK62N60X)

                特性

                • “漏源應該是仙訣导通电阻□x栅极-漏极电荷”的值—— 降低约40 %[3]以提高开关电源的效率。

                注:
                [3] 与传统DTMOSIV-H系列比较

                应用

                工业设备的开关电源

                • 数据中心(服务器电方向飛去源等)
                • 光伏发电机的功率调节器
                • 不间断电源系统

                产品规格

                (@Ta=25 °C)

                器件型号 封装 极性 绝对最 千夢臉色陰沉大额定值 漏源导通电阻
                RDS(ON)
                最大值@VGS=10V
                (Ω)
                栅极√总电荷
                Qg
                典型值
                (nC)
                栅极-漏极电荷
                Qgd
                典型值
                (nC)

                输入电容Ciss
                典型值
                (pF)
                传统系列
                器件型号
                (DTMOSIV-H)
                漏源电压
                VDSS
                (V)
                漏极电流
                (DC)
                ID
                (A)
                TK110N65Z TO-247 N沟道 650 24 0.11 40 11 2250 TK25N60X
                TK110Z65Z TO-247-4L 650 24 0.11 40 11 2250 TK25Z60X
                TK110A65Z TO-220SIS 650 24 0.11 40 11 2250 TK25A60X
                TK125V65Z DFN8x8 650 24 0.125 40 11 2250 TK25V60X
                TK155A65Z TO-220SIS 650 18 0.155 29 8 1635 TK20A60W[4]
                TK170V65Z DFN8x8 650 18 0.17 29 8 1635 TK20V60W[4]
                TK190A65Z TO-220SIS 650 15 0.19 25 7.1 1370 TK16A60W[4]
                TK210V65Z DFN8x8 650 15 0.21 25 7.1 1370 TK17V65W[4]

                注:
                [4] DTMOSIV系列

                内部电路

                The illustration of internal circuits of lineup expansion of the new generation super junction N-ch power MOSFET “DTMOSVI series” contributing to higher efficiency of power supplies: TK110N65Z, TK110Z65Z, TK110A65Z, TK125V65Z, TK155A65Z, TK170V65Z, TK190A65Z, TK210V65Z.

                应用电路示例

                The illustration of application circuit examples of lineup expansion of the new generation super junction N-ch power MOSFET “DTMOSVI series” contributing to higher efficiency of power supplies: TK110N65Z, TK110Z65Z, TK110A65Z, TK125V65Z, TK155A65Z, TK170V65Z, TK190A65Z, TK210V65Z.

                本文所示应用电路仅供劍訣参考。
                需要进行全面评≡估,特别是在量产设计ω 阶段。
                提供这些应用电路实例并不授予任何工业产权许可。

                特性比较[1]

                The illustration of comparison of characteristics of lineup expansion of the new generation super junction N-ch power MOSFET “DTMOSVI series” contributing to higher efficiency of power supplies: TK110N65Z, TK110Z65Z, TK110A65Z, TK125V65Z, TK155A65Z, TK170V65Z, TK190A65Z, TK210V65Z.

                注:
                [5] 测量数据的平均值

                Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

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