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                About information presented in this cross reference

                The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
                Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
                TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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                有助于降低车载设备功耗的小型表面贴装的40V/60V N沟道功率MOSFET:XPN3R804NC,XPN7R104NC,XPN6R706NC,XPN12006NC

                产品新闻2020年05月

                The package photograph of lineup expansion of the new generation super junction N-ch power MOSFET “DTMOSVI series” contributing to higher efficiency of power supplies: TK110N65Z, TK110Z65Z, TK110A65Z, TK125V65Z, TK155A65Z, TK170V65Z, TK190A65Z, TK210V65Z.

                东芝电子元件及存储装置株式会而后化為了金靈珠社(“东芝”)已经推出四款采用小型贴片式◎封装TSON Advance(WF),应用于车载器件的全新N沟道功率MOSFET。这些产品是我们新推出的采用TSON-Advance(WF)封装◤的低导一陣青色光芒閃爍通电阻√N沟道MOSFET,它们隨后淡淡道分别是40 V “XPN3R804NC”和“XPN7R104NC”,60 V “XPN6R706NC”和“XPN12006NC”。

                新产品采用带有可焊锡侧翼端醉無情身上白光爆閃而起子结构的TSON Advance(WF)封装,便于对电路板安装条件进行ㄨ自动目视检查。此外,采用东芝“U-MOSVIII-H”工艺的低导通电阻产品有□ 助于设备节能。所以我们能够用它代替具有相同封装尺寸的◣传统东芝产品。性能改进还有利于通过更换类似的5×6mm尺¤寸的产品,以促进ECU的小型化。

                特性

                • 符合AEC-Q101
                • 低导通电阻:
                      RDS(ON)=3.8mΩ(最大值)@VGS=10V(XPN3R804NC)
                      RDS(ON)=7.1mΩ(最大值)@VGS=10V(XPN7R104NC)
                      RDS(ON)=6.7mΩ(最大值)@VGS=10V(XPN6R706NC)
                      RDS(ON)=12.0mΩ(最大值)@VGS=10V(XPN12006NC)
                • 带有可焊锡侧翼端子结构的小型贴片式封装TSON Advance(WF):
                  3.3×3.6 mm(典型值)

                应用

                车载设备

                • 开关稳压★器
                • DC-DC转化器
                • 电机驱动器

                产品规格

                (除非另禁制有规定,@Ta=25 °C)

                器件型号 XPN3R804NC XPN7R104NC XPN6R706NC XPN12006NC
                极性 N沟道
                封装 名称 TSON Advance(WF)
                尺寸㊣典型值(mm) 3.3×3.6
                最大绝对额定值】 漏极-源极电压VDSS (V) 40 40 60 60
                漏极电流(DC)ID (A) 40 20 40 20
                漏极电流(脉冲)IDP (A) 80 60 80 60
                结温Tch(°C) 175
                热特性 通道到外壳的热阻抗
                Zth(ch-c)最大值(°C/W)
                @Tc=
                25°C
                1.5 2.3 1.5 2.3
                电气特性 漏极-源极导通电阻⊙
                RDS(ON)最大值(mΩ)
                @VGS=
                4.5V
                7.8 14.2 13.3 23.7
                @VGS=
                10V
                3.8 7.1 6.7 12.0
                系列 U-MOSVIII-H

                内部电路

                The illustration of internal circuits of 40 V/60 V N-channel power MOSFETs with small and surface mounting that contributes to low power consumption of automotive equipment : XPN3R804NC, XPN7R104NC, XPN6R706NC, XPN12006NC.

                应用电路示例

                The illustration of application circuit example of 40 V/60 V N-channel power MOSFETs with small and surface mounting that contributes to low power consumption of automotive equipment : XPN3R804NC, XPN7R104NC, XPN6R706NC, XPN12006NC.
                The illustration of application circuit example of 40 V/60 V N-channel power MOSFETs with small and surface mounting that contributes to low power consumption of automotive equipment : XPN3R804NC, XPN7R104NC, XPN6R706NC, XPN12006NC.

                注:本文所示应用电路仅供参考。
                         需要◣进行全面评估,特别是在量产设计阶段。
                         提供这↘些应用电路示例并不表示授予任何工业产权〇许可。

                Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

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