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                About information presented in this cross reference

                The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
                Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
                TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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                采用有助于提高电源效率的新工艺80V N沟道功率MOSFET的产品线三本秘籍朝開口道扩展:TPH2R408QM,TPH4R008QM,TPN8R408QM,TPN12008QM

                Product News 2020-07

                The package photograph of expansion of the lineup of 80 V N-channel power MOSFETs with the adoption of a new process that helps to improve the efficiency of power supplies : TPH2R408QM, TPH4R008QM, TPN8R408QM, TPN12008QM.

                Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched four products in its lineup of new generation 80 V N-channel power MOSFET “U-MOSX-H series” suitable for switching power supplies of industrial equipment. They are “TPH2R408QM” and “TPH4R008QM” that use the SOP Advance(N)[1] surface-mount-type package offering land-pattern's industrial compatibility, and “TPN8R408QM” and “TPN12008QM” that use the TSON Advance package.

                By adopting the latest generation U-MOSX-H process with a low voltage trench structure, the new products feature industry-leading[2] low drain-source On-resistance. And by optimizing the device structure, they have improved the tradeoff between the On-resistance and output charge[3]. This can reduce the conduction loss and help to reduce the power consumption of equipment. In addition, they have inherited the low gate switch charge characteristics from the existing generation process U-MOSVIII-H, reducing the values of "drain-source On-resistance × gate switch charge[4]", a figure of merit in switching applications.

                Notes :
                [1] SOP Advance(N) : 4.90 × 6.10 mm (typ.) package offering land-pattern's industrial compatibility more than the SOP Advance.
                [2] Among products with the same rating, as of June, 2020. Toshiba survey.
                [3] Compared with TPH4R008NH (U-MOSVIII-H series), TPH2R408QM has improved its "typical drain-source On-resistance × typical output charge" by about 31 %.
                [4] Compared with TPH4R008NH (U-MOSVIII-H series), TPH2R408QM has reduced its "typical drain-source On-resistance × typical gate switch charge" by about 10 %.

                Features

                • Industry’s lowest level[2] On-resistance :
                    RDS(ON)=2.43 mΩ (max) @VGS=10 V (TPH2R408QM)
                    RDS(ON)=4 mΩ (max) @VGS=10 V (TPH4R008QM)
                    RDS(ON)=8.4 mΩ (max) @VGS=10 V (TPN8R408QM)
                    RDS(ON)=12.3 mΩ (max) @VGS=10 V (TPN12008QM)
                • Low output charge, low gate switch charge
                • Low gate voltage drive (6 V drive)

                 

                Applications

                • Switching power supplies for industrial equipment
                   (High efficiency AC-DC converters, high efficiency DC-DC converters, etc.)
                • Motor control equipment (Motor drivers, etc.)

                 

                Product Specifications

                (Unless otherwise specified, @Ta=25 °C)

                Part
                number
                Absolute
                maximum
                ratings
                Drain-source
                On-resistance
                RDS(ON)
                max
                (mΩ)
                Total
                gate
                charge
                Qg
                typ.
                (nC)
                Gate
                switch
                charge
                QSW
                typ.
                (nC)
                Output
                charge
                Qoss
                typ.
                (nC)
                Input
                capacitance
                Ciss
                typ.
                (pF)
                Packages
                Drain-
                source
                voltage
                VDSS
                (V)
                Drain
                current
                (DC)
                ID
                (A)
                @Tc=
                25 °C
                @VGS=
                10 V
                @VGS=
                6 V
                TPH2R408QM 80 120 2.43 3.5 87 28 90 5870 SOP Advance(N)
                [1]
                TPH4R008QM 86 4 5.6 57 18 60 3750
                TPN8R408QM 32 8.4 12.4 28 8.4 29.9 1750 TSON Advance
                TPN12008QM 26 12.3 17.7 22 6.5 21.1 1280

                Internal Circuit

                The illustration of internal circuit of expansion of the lineup of 80 V N-channel power MOSFETs with the adoption of a new process that helps to improve the efficiency of power supplies : TPH2R408QM, TPH4R008QM, TPN8R408QM, TPN12008QM.

                Application Circuit Examples

                The illustration of application circuit examples of expansion of the lineup of 80 V N-channel power MOSFETs with the adoption of a new process that helps to improve the efficiency of power supplies : TPH2R408QM, TPH4R008QM, TPN8R408QM, TPN12008QM.
                The illustration of application circuit examples of expansion of the lineup of 80 V N-channel power MOSFETs with the adoption of a new process that helps to improve the efficiency of power supplies : TPH2R408QM, TPH4R008QM, TPN8R408QM, TPN12008QM.

                Note: The application circuits shown in this document are provided for reference purposes only.
                         Thorough evaluation is required, especially at the mass production design stage.
                         Providing these application circuit examples does not grant any license for industrial property rights.

                Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

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